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| jmnic product specification silicon pnp power transistors 2SA1095 description ? ? with mt-200 package ? complement to type 2sc2565 ? high breakdown voltage ? high transition frequency applications ? power amplifier applications ? recommended for 100w high-fidelity audio frequency amplifer output stage pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol param eter conditions va lue unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i e emitter current 15 a p c collectorl power dissipation t c =25 ?? 150 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (mt-200) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA1095 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-100ma; i b =0 -160 v v (br)ebo emitter-base breakdown voltage i e =-10ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-5 a;i b =-0.5 a -2.0 v v be base-emitter on voltage i c =-5a ; v ce =-5v -2.0 v i cbo collector cut-off current v cb =-160v; i e =0 -50 | a i ebo emitter cut-off current v eb =-5v; i c =0 -50 | a h fe-1 dc current gain i c =-1a ; v ce =-5v 55 240 h fe-2 dc current gain i c =-5a ; v ce =-5v 40 f t transition fre quency i c =-1a ; v ce =-10v 60 mhz c ob output capacitance i e =0; v cb =-10v;f=1mhz 350 pf ? h fe classifications r o y 55-110 80-160 120-240 jmnic product specification 3 silicon pnp power transistors 2SA1095 package outline fig.2 outline dimensions |
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